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翻訳と辞書　辞書検索 [ 開発暫定版 ] スポンサード リンク Polysilicon depletion effect ： ウィキペディア英語版 Polysilicon depletion effect Polysilicon depletion effect is the phenomenon in which unwanted variation of threshold voltage of the MOSFET devices using polysilicon as gate material is observed, leading to unpredicted behaviour of the electronic circuit. Polycrystalline silicon, also called polysilicon, is a material consisting of small silicon crystals. It differs from single-crystal silicon, used for electronics and solar cells, and from amorphous silicon, used for thin film devices and solar cells. ==Choice of gate material== The gate contact may be of polysilicon or metal, previously polysilicon was chosen over metal because the interfacing between polysilicon and gate oxide (SiO2) was favourable. But the conductivity of the poly-silicon layer is very low and because of this low conductivity, the charge accumulation is low, leading to a delay in channel formation and thus unwanted delays in circuits. The poly layer is doped with N-type or P-type impurity to make it behave like a perfect conductor and reduce the delay. 抄文引用元・出典: フリー百科事典『 ウィキペディア（Wikipedia）』 ■ウィキペディアで「Polysilicon depletion effect」の詳細全文を読む スポンサード リンク 翻訳と辞書 : 翻訳のためのインターネットリソース Copyright(C) kotoba.ne.jp 1997-2016. All Rights Reserved.